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VERTICAL AL/EPI SI/AL, AND ALSO AL/AL OXIDE/AL, JOSEPHSON JUNCTION DEVICES FOR QUBITS

机译:垂直Al / Epi Si / Al,以及Al / Al oxide / Al,用于Qubits的Josephson结装置

摘要

A vertical Josephson junction device includes a substrate, and an epitaxial stack formed on the substrate. The vertical Josephson junction device includes a first superconducting electrode embedded in the epitaxial stack, and a second superconducting electrode embedded in the epitaxial stack, the second superconducting electrode being separated from the first superconducting electrode by a dielectric layer. In operation, the first superconducting electrode, the dielectric layer, and the second superconducting electrode form a vertical Josephson junction.
机译:垂直的Josephson结装置包括基板和形成在基板上的外延堆叠。 垂直的Josephson结装置包括嵌入在外延堆叠中的第一超导电极,以及嵌入外延堆叠中的第二超导电极,第二超导电极通过介电层与第一超导电极分离。 在操作中,第一超导电极,介电层和第二超导电极形成垂直的Josephson结。

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