A plasma based method for producing F and HF from harmless precursors and their use in room temperature plasma processing

摘要

A method and apparatus for generating HF in an electron beam produced plasma.An inert gas such as fluorine, hydrogen and argon, such as AR / SF6 / H2O or Ar / SF6 / NH3, flows into the plasma processing chamber to produce low pressure gas in the chamber.The electron beam directed into the gas forms a plasma from the gas, the energy from the electron beam dissociates the f containing molecule, and the f containing molecule reacts with the H containing gas to produce HF in the plasma.The concentration of gaseous phase HF in the plasma is a very small percentage of all gases in the chamber, but due to its high reactivity, the low concentration of HF produced by the method of the present invention is sufficient to modify the surface of the material; The same function as the HF aqueous solution for removing oxygen from the exposed material.Diagram