Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method

摘要

The present invention provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1),; wherein R1 represents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, or a hydroxyl group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each m2 is independently an integer of 0 to 7, in which at least one m2 is an integer of 1 to 7, and each q is independently 0 or 1, provided that at least one selected from the group consisting of R1 and R2 is a group having an iodine atom.