首页>
外国专利>
FINFET SPLIT GATE NON-VOLATILE MEMORY CELLS WITH ENHANCED FLOATING GATE TO FLOATING GATE CAPACITIVE COUPLING
FINFET SPLIT GATE NON-VOLATILE MEMORY CELLS WITH ENHANCED FLOATING GATE TO FLOATING GATE CAPACITIVE COUPLING
展开▼
机译:FinFET分开栅极非易失性存储器,具有增强型浮栅到浮栅电容耦合
展开▼
页面导航
摘要
著录项
相似文献
摘要
Memory cells formed on upwardly extending fins of a semiconductor substrate, each including source and drain regions with a channel region therebetween, a floating gate extending along the channel region and wrapping around the fin, a word line gate extending along the channel region and wrapping around the fin, a control gate over the floating gate, and an erase gate over the source region. The control gates are a continuous conductive strip of material. First and second fins are spaced apart by a first distance. Third and fourth fins are spaced apart by a second distance. The second and third fins are spaced apart by a third distance greater than the first and second distances. The continuous strip includes a portion disposed between the second and third fins, but no portion of the continuous strip is disposed between the first and second fins nor between the third and fourth fins.
展开▼