首页> 外国专利> METHOD FOR MANUFACTURING A SILICON-BASED CORIOLIS-FORCE-BASED FLOW SENSING DEVICE, CORIOLIS-FORCE-BASED FLOW SENSING DEVICE, AND SYSTEM FOR MEASURING A PROPERTY OF A FLUID

METHOD FOR MANUFACTURING A SILICON-BASED CORIOLIS-FORCE-BASED FLOW SENSING DEVICE, CORIOLIS-FORCE-BASED FLOW SENSING DEVICE, AND SYSTEM FOR MEASURING A PROPERTY OF A FLUID

机译:制造基于硅基的基于科里莫里斯力的流量传感装置,基于科里奥利力的流动传感装置,以及用于测量流体的性质的系统

摘要

Embodiments of a Coriolis-force-based flow sensing device and embodiments of methods for manufacturing embodiments of the Coriolis-force-based flow sensing device, comprising the steps of: forming a driving electrode; forming, on the driving electrode, a first sacrificial region; forming, on the first sacrificial region, a first structural portion with a second sacrificial region buried therein; forming openings for selectively etching the second sacrificial region; forming, within the openings, a porous layer having pores; removing the second sacrificial region through the pores of the porous layer, forming a buried channel; growing, on the porous layer and not within the buried channel, a second structural portion that forms, with the first structural region, a structural body; selectively removing the first sacrificial region thus suspending the structural body on the driving electrode.
机译:基于科里奥利力的流动传感装置的实施例和用于制造基于科里奥利力的流动传感装置的制造实施例的方法的实施例,包括以下步骤:形成驱动电极; 在驱动电极上形成第一牺牲区域; 在第一牺牲区域上形成具有第二牺牲区域的第一结构部分; 形成用于选择性蚀刻第二牺牲区域的开口; 在开口内形成具有孔隙的多孔层; 通过多孔层的孔去除第二牺牲区域,形成掩埋通道; 在多孔层上生长而不是在掩埋通道内,具有形成的第二结构部分,具有第一结构区域的第二结构部分; 因此,选择性地移除第一牺牲区域,从而将结构体悬挂在驱动电极上。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号