SILICON CARBIDE: MATERIAL FOR A RADIOISOTOPE ENERGY SOURCE

摘要

Silicon carbide as a material for a radioisotope energy source contains a monocrystalline phase of a semiconductor structure of silicon carbide in the form of a film having n- or p-type conductivity for separating electron-hole pairs and includes in the molecular structure of the silicon carbide the elements: isotope of carbon C12 and additionally C14 for transforming its radiation energy into electrical energy, characterized in that the concentration of the radioisotope C14 in one of the layers of n- or p-type conductivity is from 5·1017 to 1020 cm-3, wherein the layer of silicon carbide of n- or p-type conductivity is formed on the surface of a monocrystalline silicon substrate, and the layer of silicon carbide with C14 of n- or p-type conductivity has porous surface morphology.