FIELD: chemistry.;SUBSTANCE: invention relates to semiconductor structures of silicon carbide. Silicon carbide: material for a radioisotope energy source, which contains a monocrystalline phase of a silicon carbide semiconductor structure in the form of a film having n- and p-type conductivity for separating electron-hole pairs, includes in the silicon carbide molecular structure elements: carbon isotope C12 and additionally C14 for conversion of its radiation energy into electrical energy, wherein concentration of radioisotope C14 in one of layers of n- or p-type conductivity is from 5⋅1017 to 1020 cm-3. Layer of n- or p-type silicon carbide layer can be formed on surface of monocrystalline silicon substrate. Layer of silicon carbide with C14 n- or p-type conductivity has porous surface morphology.;EFFECT: invention provides minimization of radioisotope C14 consumption in the substance of the semiconductor structure, which determines the technical and economic efficiency and radiation safety of the substance application in semiconductor energy conversion devices.;3 cl, 6 ex, 5 dwg
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