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ReS2 METHOD OF MANUFACTURING A RES2 THIN LAYER AND METHOD OF MANUFACTURING A PHOTO DETECTOR USING THE SAME
ReS2 METHOD OF MANUFACTURING A RES2 THIN LAYER AND METHOD OF MANUFACTURING A PHOTO DETECTOR USING THE SAME
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机译:Res2制造Res2薄层的方法和使用相同的光检测器的制造方法
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摘要
Provided are a method for forming a ReS 2 thin film and a method for forming a detector using the same. The ReS 2 thin film prepares a substrate including an insulating film, treats the surface of the insulating film of the substrate with a seed promoter, and directly transfers a polycrystalline ReS 2 thin film on the substrate surface-treated with the seed promoter through a chemical vapor deposition process. It involves forming directly. In the case of chemical vapor deposition, the process space in which the deposition process is performed is heated to 330°C for 12 minutes and maintained at 330°C for 5 minutes to stabilize the thermal process, and the process space is heated at 760°C for 20 minutes and maintained for 15 minutes. and growing the ReS 2 thin film.
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机译:提供了一种用于形成RES 2薄膜的方法和使用该薄膜的形成检测器的方法。 RES 2薄膜制备包括绝缘膜的基板,用种子启动子处理基板的绝缘膜的表面,并通过化学用种子启动子进行表面处理的基板上的多晶RES 2薄膜。 气相沉积过程。 它涉及直接形成。 在化学气相沉积的情况下,将进行沉积工艺的处理空间被加热至330℃,再保持在330℃,保持5分钟以稳定热过程,并在760时加热工艺空间 °C 20分钟并保持15分钟。 并生长res 2薄膜。
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