Solving spontaneous arcs during thick film deposition of high-temperature amorphous carbon deposition

摘要

Embodiments of the present invention generally relate to devices for reducing the arc during thick film deposition in a plasma processing chamber.In one embodiment, an edge ring comprising an inner diameter diameter of about 0.28 to about 0.38 inches greater than the outer diameter of the substrate is used to deposit a thick (2 micron) layer on the substrate.The layer may be a carbon hard mask layer, such as a dielectric layer, for example an amorphous carbon layer.The gap between 0.14 and 0.19 inches between the outer edge of the substrate during deposition of the thick layer and the inner edge of the edge ring reduces the thickness of the layer support while maintaining the uniformity of the layer thickness.Diagram