SELECTIVE-AREA GROWTH OF III-V MATERIALS FOR INTEGRATION WITH SILICON PHOTONICS

摘要

Embodiments provide for selective-area growth of III-V materials for integration with silicon photonics. The resulting platform includes a substrate; an insulator, extending a first distance from the substrate, including a passive optical component at a second distance from the substrate less than the first distance, and defining a pit extending to the substrate; and a III-V component, extending from the substrate within in the pit defined in the insulator, the III-V component including a gain medium included at the second distance from the substrate and optically coupled with the passive optical component. The pit may define an Optical Coupling Interface between the III-V component and the passive optical component, or a slit defined between the III-V component and the passive optical component may define the Optical Coupling Interface.