Ultra-thin film hybrid memory device and vertically 3D stacked-structure memory array comprising the same

摘要

The present invention relates to an ultra-thin hybrid memory device having a thickness of about 10 nm that simultaneously exhibits switch and memory characteristics by stacking heterogeneous thin films, and a vertical three-dimensional stacked structure memory array including the same. According to the present invention, the switching layer and the memory layer are formed to be less than 10 nm by atomic layer deposition (ALD), and an ultra-thin hybrid memory device having an optimum thickness is excellent with low off current, low reset current, and high on/off ratio. performance, and excellent uniformity and retention characteristics are exhibited by the insertion of a metal buffer layer having a lower electrode potential value than that of the second electrode.