Power integrated device, and electronic device and electronic system having the power integrated device

摘要

The power integrated device includes a semiconductor layer of a first conductivity type, a source region and a drain region of a second conductivity type disposed to be spaced apart from each other on the upper portion of the semiconductor layer, and a second portion disposed to surround the drain region on the upper portion of the semiconductor layer. a second conductivity-type first drift region and a second semiconductor layer disposed on the semiconductor layer between the source region and the first drift region, one side contacting the side of the first drift region and having an impurity concentration lower than the impurity concentration of the first drift region a gate insulating layer disposed over the drift region, a channel region between the source region and the second drift region and extending over the second drift region by a predetermined length; a field insulating plate having a planar structure disposed on it and extending over the drain region by a predetermined length, and a gate conductive layer pattern disposed on the gate insulating layer and disposed to extend over the field insulating plate.