-k EMBEDDED FERROELECTRIC MEMORY IN HIGH-K FIRST TECHNOLOGY

摘要

In some embodiments, the present disclosure relates to an integrated chip. The integrated chip has a first doped region and a second doped region in a substrate. A FeRAM (ferroelectric random access memory) device is disposed over the substrate between the first doped region and the second doped region. The FeRAM device has a ferroelectric material and a conductive electrode. A ferroelectric material is disposed over the substrate, and a conductive electrode is disposed over the ferroelectric material and between sidewalls of the ferroelectric material.