Void free ALD process without nucleation

摘要

The method includes forming a gap-filling layer containing tungsten or molybdenum, wherein the substrate surface having at least one feature on the surface is sequentially exposed to a metal precursor and to a reducing agent comprising hydrogen. By doing so, a gap-filling layer is formed on the feature and there is no nucleation layer between the substrate surface and the gap-filling layer. [Selection diagram] FIG.