The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI]; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI] selected from Cu+, Ag+ and Au+; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X].
展开▼
机译：半导体器件涉及一种包含半导体材料的半导体器件，其中半导体材料包括包含：（i）一种或多种第一单块的化合物[a]; （ii）一种或多种第二个单能离[b i ]; （iii）一种或多种TRIPS [B III ]; （iv）一种或多种卤化物阴离子[x]。本发明还涉及一种制造包括所述半导体材料的半导体器件的方法。还描述了一种包含：（i）一种或多种第一单能[a]; （ii）从Cu + ，Ag + 和au + 中选择的一种或多种第二种单块[b i ] ; （iii）一种或多种TRIPS [B III ]; （iv）一种或多种卤化物阴离子[x]。
展开▼
