TRANSIENT-VOLTAGE-SUPPRESSION DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

A transient-voltage-suppression diode structure and a manufacturing method thereof are disclosed. The structure includes a P type base substrate, an N type epitaxial layer, a P+ type implant layer, an N+ type implant layer, a plurality of deep trench portions, an interlayer dielectric layer and a first metal layer. The N type epitaxial layer is disposed on the P type base substrate. The P+ type implant layer and the N+ type implant layer are embedded within the N type epitaxial layer. The deep trench portions pass through the N type epitaxial layer and are connected with the P type base substrate. The first metal layer is disposed on the interlayer dielectric layer and connected with the P+ type implant layer, the N+ type implant layer, and the deep trench portions. The deep trench portions connected with the first metal layer are configured to form a silicon controlled rectifier.