TRANSIENT-VOLTAGE-SUPPRESSION DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

A transient-voltage-suppression diode structure and a manufacturing method thereof are disclosed. The structure includes a substrate, an N− type epitaxial layer, a first metal layer, a first N+ type implant layer, a deep N+ type implant layer and plural polycrystalline plugs. The N− type epitaxial layer is disposed on the substrate. The first metal layer is disposed on the N− type epitaxial layer to form a working-voltage terminal. The first N+ type implant layer spatially corresponding to the working-voltage terminal and embedded in the N− type epitaxial layer is connected with the working-voltage terminal. The deep N+ type implant layer spatially corresponding to the working-voltage terminal and embedded in the N− type epitaxial layer is spaced apart from the first N+ type implant layer at a separation distance. The plural polycrystalline plugs are connected between the working-voltage terminal of the first metal layer and the deep N+ type implant layer.