METHODS FOR MANUFACTURING NON-PLANAR SEMICONDUCTOR DEVICES HAVING GERMANIUM-BASED ACTIVE REGIONS WITH A COMBINED RELEASE-ETCH PASSIVATION STEP.

摘要

Non-planar semiconductor devices having germanium-based active regions with release etch-passivation surfaces are described. For example, a semiconductor device includes a vertical arrangement of a plurality of germanium-rich nanowires disposed above a substrate. Each nanowire includes a channel region having a sulfur-passivated outer surface. A gate stack is disposed on and completely surrounds the channel region of each of the germanium-rich nanowires. The gate stack includes a gate dielectric layer disposed on and surrounding the sulfur-passivated outer surface and a gate electrode disposed on the gate dielectric layer. Source and drain regions are disposed on either side of the channel regions of the germanium-rich nanowires.