- NON-PLANAR SEMICONDUCTOR DEVICE HAVING GERMANIUM-BASED ACTIVE REGION WITH RELEASE ETCH-PASSIVATION SURFACE

摘要

A non-planar semiconductor device having a germanium based active region with a release etch passivation surface is described. For example, a semiconductor device includes a vertical arrangement of a plurality of germanium rich nanowires disposed over a substrate. Each nanowire includes a channel region having a sulfur-passivated outer surface. A gate stack is disposed on the channel region of each of the germanium rich nanowires and completely surrounds the channel region. The gate stack includes a gate dielectric layer disposed on the sulfur-passivated outer surface and surrounding the sulfur-passivated outer surface and a gate electrode disposed on the gate dielectric layer. Source and drain regions are disposed on either side of the channel regions of germanium rich nanowires.