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Single electron transistor with gap tunnel barriers
Single electron transistor with gap tunnel barriers
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机译:具有间隙隧道屏障的单电子晶体管
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摘要
A semiconductor device includes a single electron transistor (SET) having an island region, a bottom source/drain region under the island region, and a top source/drain region over the island region, a first gap between the bottom source/drain region and the island region, a second gap between the top source/drain region and the island region, and a gate structure on a side of the island region.
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