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Oxide semiconductor film, thin film transistor, oxide sintered body for sputtering target, sputtering target and electronic equipment
Oxide semiconductor film, thin film transistor, oxide sintered body for sputtering target, sputtering target and electronic equipment
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机译:氧化物半导体膜,薄膜晶体管,氧化物烧结体用于溅射靶,溅射靶和电子设备
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摘要
Atomic ratios of In, Ga and Sn are as follows: 0.01 ≦ Ga / (In + Ga + Sn) ≦ 0.30 (1) 0.01 ≦ Sn / (In + Ga + Sn) ≦ 0.40 (2) 0.55 .Ltoreq.In / (In + Ga + Sn) .ltoreq.0.98 (3) and the rare earth element X in the following atomic ratio 0.03.ltoreq.X / (In + Ga + Sn + X) .ltoreq.0.25 (4) Oxide semiconductor film.
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机译:In,Ga和Sn的原子比如下:0.01≤Ga/(In + Ga + Sn)≤0.30(1)0.01≤n/(In + Ga + Sn)≤0.40(2)0.55 .ltoreq.in / (In + Ga + Sn).ltoreq.0.98(3)和稀土元素x在以下原子比0.03.ltoreq.x /(In + Ga + Sn + x).ltoreq.0.25(4)氧化物半导体膜。
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