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FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE WITH INTEGRATED OVONIC THRESHOLD SWITCHES AND METHODS OF MAKING THE SAME
FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE WITH INTEGRATED OVONIC THRESHOLD SWITCHES AND METHODS OF MAKING THE SAME
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机译:具有集成椭圆形阈值开关的铁电隧道结动装置及其制造方法
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摘要
A ferroelectric tunnel junction memory device includes a bit line, a word line and a memory cell located between the bit line and the word line. The memory cell includes a ferroelectric tunneling dielectric portion and an ovonic threshold switch material portion.
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