METHODS FOR FORMING A GERMANIUM ISLAND USING SELECTIVE EPITAXIAL GROWTH AND A SACRIFICIAL FILLING LAYER

摘要

A method for obtaining a semiconductor island includes epitaxially growing a semiconductor structure over a substrate having a mask layer defining an area not covered by the mask layer. The semiconductor structure includes a first portion positioned adjacent to the mask layer and a second portion positioned away from the mask layer. The first portion has a first height that is less than a second height of a portion of the mask layer positioned adjacent the first portion. The second portion has a third height that is equal to or greater than the second height. The method also includes forming a fill layer over at least the first portion; and subsequently removing at least a portion of the semiconductor structure located above the second height. A device fabricated by this method is also disclosed.