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NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD OF THE NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD OF THE NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
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机译:非易失性半导体存储器件和非易失性半导体存储器件的制造方法
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摘要
A certain embodiment includes: first wiring layers extended in a first direction arranged in a second direction crossing the first direction; second wiring layers, including two layers having mutually different materials, extended in the second direction arranged in the first direction above the first wiring layers; third wiring layers extended in the first direction arranged in the second direction above the second wiring layers; a first memory cell disposed between one second wiring layer and one first wiring layer between the second and first wiring layers; a second memory cell disposed between one third wiring layer and the one second wiring layer between the third and second wiring layers; a third memory cell disposed between the one second wiring layer and another closest first wiring layer adjacent to the first wiring layer having the first memory cell; and an insulation layer disposed between the first and third memory cells.
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