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BIPOLAR JUNCTION TRANSISTOR WITH BIASED STRUCTURE BETWEEN BASE AND EMITTER REGIONS
BIPOLAR JUNCTION TRANSISTOR WITH BIASED STRUCTURE BETWEEN BASE AND EMITTER REGIONS
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机译:双极连接晶体管,基部和发射极区之间的偏置结构
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摘要
In a described example, a bipolar junction transistor includes a substrate. An emitter region, a base region, and a collector region are each formed in the substrate. A gate-type structure is formed on the substrate between the base region and the emitter region. A contact is coupled to the gate-type structure, and the contact is adapted to be coupled to a source of DC voltage.
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