Phase-change memory cell with vanadium oxide based switching layer

摘要

A phase-change memory cell, including, in sequence in the following order: a first electrode layer, a switching layer comprising vanadium oxide (VO_x) material, a phase-change material layer, and a second electrode layer, is provided. The switching layer is adapted to control the phase-change material layer to switch between a crystalline state and an amorphous state when a voltage is applied to the first electrode layer and the second electrode layer.