Surface microfabrication infrared sensor using high temperature stability interference type absorber

摘要

PROBLEM TO BE SOLVED: To provide a surface micro-machined infrared sensor using a highly temperature stable interferometric absorber.SOLUTION: A method for manufacturing a surface machined infrared sensor package is disclosed. A semiconductor wafer is provided having a front side surface and a back side surface. A transistor is defined on the substrate front side. A thin film reflector is implanted in the substrate front side, and a sensor is formed on the semiconductor substrate front side adjacent to the reflector. A thin-film absorber is deposited upon the sensor, where the thin-film absorber is substantially parallel to the reflector.SELECTED DRAWING: Figure 2