Method for manufacturing silicon carbide substrate, method for manufacturing silicon carbide epitaxial substrate, and method for manufacturing silicon carbide semiconductor device

摘要

A silicon carbide ingot is cut using a wire. The silicon carbide ingot has a polytype of 4H—SiC. The silicon carbide ingot includes a top surface, a bottom surface opposite to the top surface, and a side surface between the top surface and the bottom surface. A direction from the bottom surface toward the top surface is a direction parallel to a [0001] direction or a direction inclined by less than or equal to 8° relative to the [0001] direction. In the cutting of the silicon carbide ingot, the silicon carbide ingot is cut from the side surface at a (000-1) plane side along a straight line parallel to a direction within ±5° relative to a direction that bisects an angle formed by a [1-100] direction and a [11-20] direction when viewed in the direction from the bottom surface toward the top surface.