Manufacturing method for nano transistor of double gate all aound structure, the nano transistor prepared thereby and the sensor of extended-gate structure using the same

摘要

The present invention relates to a method for manufacturing a nanotransistor having a double gate all-around structure, a nanotransistor manufactured therefrom, and a sensor having an extended-gate structure using the same, and more particularly, to a conventional extended-gate FET structure. uses a commercial transistor, so when the size of the sensor decreases, the performance deteriorates, whereas the present invention uses a double gate all-around nano-sized transistor in the extended-gate FET structure. , it is electrically connected to the sensor and there is no change in sensor performance even when the area of the sensor increases or decreases, so the size of the sensor can be reduced to reduce manufacturing costs. It relates to a method for manufacturing a nanotransistor having a double gate all-around structure, which is very economical and commercially available because only a part can be replaced, a nanotransistor manufactured therefrom, and a sensor having an extended-gate structure using the same .