首页> 外国专利> PLASMA GENERATION DEVICE, SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, PROGRAM, PLASMA GENERATION METHOD, ELECTRODE, AND REACTION TUBE

PLASMA GENERATION DEVICE, SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, PROGRAM, PLASMA GENERATION METHOD, ELECTRODE, AND REACTION TUBE

机译:等离子体生成装置,基板处理装置,半导体器件制造方法,程序,等离子体生成方法,电极和反应管

摘要

It provides a technique that can determine abnormalities in plasma. Using an imaging device disposed in the processing chamber, the gas supply port for supplying the plasmaized gas in the processing chamber is imaged, based on the imaged image of the gas supply port, the emission intensity of plasma is detected, and the detected emission intensity On the basis of, a technique for determining at least one of the presence or absence of occurrence of an abnormal discharge of the plasma and the occurrence of flicker is provided.
机译:它提供了一种可以确定等离子体异常的技术。使用设置在处理室中的成像装置,基于气体供应端口的成像图像,检测到用于供应加工室中的血管化气体的气体供应端口,检测到等离子体的发射强度,以及检测到的发射强度在基础上,提供一种用于确定存在或不存在异常放电的存在或不存在等离子体的发生和闪烁的发生的技术。

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