HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

摘要

The electronic device has a hexagonal crystal structure, And a III-V substrate having a normal to the growth surface with a misalignment from the direction of 0.15° to 0.65°. The electronic device also includes a first epitaxy layer connected to the III-V substrate and a second epitaxy layer connected to the first epitaxy layer. The electronic device further includes a first contact in electrical contact with the substrate and a second contact in electrical contact with the second epitaxy layer.