High-power gallium nitride electronics with miscut substrates

摘要

The electronic device includes a III-V substrate having a hexagonal structure and a growth surface normal characterized by an orientation difference of 0.15 ° to 0.65 ° from the <0001> direction. The electronic device also includes a first epitaxial layer coupled to the III-V substrate and a second epitaxial layer coupled to the first epitaxial layer. The electronic device further includes a first contact electrically connected to the substrate and a second contact electrically connected to the second epitaxial layer.