RARE EARTH METAL METAL OXIDE ELECTRODE INTERFACING OF OXIDE MEMORY ELEMENT IN RESISTIVE RANDOM ACCESS MEMORY CELL

摘要

The thin film resistive memory material stack includes at least one of a high work function metal oxide at the interface between the first electrode and the thin film memory material, and a low work function rare earth metal at the interface between the second electrode and the thin film memory material. do. The high work function metal oxide provides a good Schottky barrier height compared to memory materials for high on/off current ratio. The compatibility of metal oxides and switching oxides reduces oxygen/depletion cycling losses for improved memory device durability. The low work function rare earth metal provides high oxygen solubility to provide ohmic contact to the resistive memory material while improving vacancy creation in the memory material in the as-deposited state for low formation voltage requirements.