Device to improve the mobility of carriers in a MOSFET channel on silicon carbide

摘要

The present invention relates to a MOSFET device arranged on a substrate 10, comprising first and second heavily doped strips 11 and 14 covered with first and second contacts 13 and 15, respectively. The two strips are spaced apart by a channel 18 that also appears on the substrate 10, the channel being covered by a dielectric layer 20, and a third contact portion 21 lying thereon. The device is characterized in that a low concentration doped thin film 19 is incorporated at the interface between the channel 18 and the dielectric layer 20, and the doped elements are distributed on both sides of the interface.