Monovalent and / or highly charged gas ion beam treatment method for producing anti glare sapphire material

摘要

A method of processing a sapphire material, the method comprising irradiating the surface of the sapphire material with a monovalent and / or multivalent gas ion beam to produce an ion implantation layer in the sapphire material, the surface being a sapphire material The ions face helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N ), Oxygen (O), fluorine (F), silicon (Si), phosphorus (P) and sulfur (S). The treatment produces an antiglare effect on the treatment materials (61, 62, 63) compared to the untreated substrate (60). Using the method, a capacitive touch panel having high transparency in the visible range can be obtained. [Selection] Figure 6