首页> 外国专利> BAW RESONATOR ARRANGEMENT WITH RESONATORS HAVING DIFFERENT RESONANCE FREQUENCIES AND MANUFACTURING METHOD

BAW RESONATOR ARRANGEMENT WITH RESONATORS HAVING DIFFERENT RESONANCE FREQUENCIES AND MANUFACTURING METHOD

机译:具有不同谐振频率和制造方法的振动谐振器装置,具有不同的谐振频率和制造方法

摘要

In at least one embodiment, the electric component comprises a first BAW-resonator (1), a second BAW-resonator (2) electrically connected to the first BAW-resonator and a carrier substrate (3) with a top side (30) on which the BAW-resonators are arranged. The first and the second BAW-resonator each comprise a bottom electrode (11,21) and a top electrode (12,22). The bottom electrodes are in each case located between the carrier substrate and the respective top electrode. A first piezoelectric layer (13) is arranged between the top electrode and the bottom electrode of the first BAW-resonator and laterally protrudes from the first BAW-resonator. The second BAW-resonator is mounted on the first piezoelectric layer in a region laterally next to the first BAW-resonator and comprises a second piezoelectric layer (23) between its top electrode and its bottom electrode. The two piezoelectric layers may have different thickness to realize resonators with different resonance frequencies on the same die.
机译:在至少一个实施例中,电气部件包括第一BAW-谐振器(1),第二横向谐振器(2),电连接到第一BAW-谐振器和载体基板(3),顶侧(30)布置了Baw-谐振器。第一和第二BAW-谐振器各自包括底部电极(11,21)和顶部电极(12,22)。底部电极在每个壳体中位于载体基板和相应的顶部电极之间。第一压电层(13)布置在第一BAW - 谐振器的顶部电极和底部之间,并从第一BAW - 谐振器横向突出。第二Baw-谐振器在横向于第一BAW-谐振器旁边的区域中安装在第一压电层上,并且在其顶部电极和其底部电极之间包括第二压电层(23)。两个压电层可以具有不同的厚度,以实现在同一管芯上具有不同谐振频率的谐振器。

著录项

  • 公开/公告号WO2021083898A1

    专利类型

  • 公开/公告日2021-05-06

    原文格式PDF

  • 申请/专利权人 RF360 EUROPE GMBH;

    申请/专利号WO2020EP80187

  • 申请日2020-10-27

  • 分类号H03H3/04;H03H9/17;H03H9/205;

  • 国家 EP

  • 入库时间 2022-08-24 18:37:01

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