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Frequency-switchable polarity-inverted BAW resonators based on electric-field-induced piezoelectric PMN-PT/PZT epitaxial film stacks

机译：基于电场诱导的压电PMN-PT / PZT外延膜叠层的频率可切换极性倒凸谐振器

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Takahiro Shimidzu; Takahiko Yanagitani;
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1. Frequency-switchable polarity-inverted BAW resonators based on electric-field-induced piezoelectric PMN-PT/PZT epitaxial film stacks [J] . Shimidzu Takahiro, Yanagitani Takahiko Journal of Applied Physics . 2019,第11期

机译：基于电场感应压电PMN-PT / PZT外延薄膜叠层的频率可转换的极性反转BAW谐振器
2. Frequency-switchable polarity-inverted BAW resonators based on PZT/PTO epitaxial films using difference in coercive field [J] . Shimidzu Takahiro, Mori Takeshi, Yanagitani Takahiko Applied Physics Letters . 2019,第21期

机译：基于PZT / PTO外延膜的矫顽场基于频率可转换的极性反转BAW谐振器
3. Effect of a thin (doped) PZT interfacial layer on the properties of epitaxial PMN-PT films [J] . Muhammad Boota, Evert P. Houwman, Giulia Lanzara, Journal of Applied Physics . 2020,第5期

机译：薄（掺杂）PZT界面层对外延PMN-PT膜性能的影响
4. DC-Induced Piezoelectric Cubic PMN - PT / Piezoelectric Tetragonal PZT Epitaxial Stack Polarity Inverted Resonators for Frequency Switchable Filters [C] . Takahiro Shimidzu, Takahiko Y Anagit Ani IEEE International Ultrasonics Symposium . 2018

机译：直流感应式压电PMN-PT /压电四边形PZT外延叠层极性反转谐振器，用于频率切换滤波器
5. Piezoelectric MEMS disk resonator and filter based on epitaxial aluminum gallium arsenide films. [D] . Deng, Ken Kan. 2006

机译：基于外延砷化铝镓薄膜的压电MEMS磁盘谐振器和滤波器。
6. Fabrication and Characterization of PZT Fibered-Epitaxial Thin Film on Si for Piezoelectric Micromachined Ultrasound Transducer [O] . Pham Ngoc Thao, Shinya Yoshida, Shuji Tanaka 2018

机译：压电微机械超声换能器上硅基PZT纤维外延薄膜的制备与表征
7. Frequency-switchable polarity-inverted BAW resonators based on PZT/PTO epitaxial films using difference in coercive field [O] . Takahiro Shimidzu, Takeshi Mori, Takahiko Yanagitani 2019

机译：基于PZT / PTO外延膜的频率可切换极性反转凸起谐振器使用矫顽磁场差异
8. Piezoelectric MEMS Microphone Based on Lead Zirconate Titanate (PZT) Thim Films [R] . Polcawich, R. G. 2004

机译：基于锆钛酸铅（pZT）薄膜的压电mEms麦克风

Frequency-switchable polarity-inverted BAW resonators based on electric-field-induced piezoelectric PMN-PT/PZT epitaxial film stacks

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