UPDATING CORRECTIVE READ VOLTAGE OFFSETS IN NON-VOLATILE RANDOM ACCESS MEMORY

摘要

A computer-implemented method, according to one approach, includes: using a first calibration scheme to calibrate the given page in the block by calculating a first number of independent read voltage offset values for the given page (606). An attempt is made to read the calibrated given page (608), and in response to determining that an error correction code failure occurred when attempting to read the calibrated given page, a second calibration scheme is used to recalibrate the given page in the block (612). The second calibration scheme is configured to calculate a second number of independent read voltage offset values for the given page. An attempt to read the recalibrated given page is also made (614). In response to determining that an error correction code failure did occur when attempting to read the recalibrated given page, one or more instructions to relocate data stored in the given page are sent (618).