首页> 外国专利> PHONON BAND EDGE EMISSION-BASED ALL SOLID STATE HIGH POWER SLAB LASER

PHONON BAND EDGE EMISSION-BASED ALL SOLID STATE HIGH POWER SLAB LASER

机译:基于声子带边缘发射的所有固态高功率平板激光器

摘要

The present invention provides a kind of all-solid-state high-power slab laser based on phonon band-edge emission, which is comprised of a pumping source, a focusing system, a resonant cavity and a self-frequency-doubling crystal; the said self-frequency-doubling crystal is a Yb-doped RECOB crystal cut into slab shape along the direction of the crystal's maximum effective nonlinear coefficient of its non-principal plane; by changing the cutting direction of the crystal, the phase matching of different wavelengths is realized, thus realizing laser output at the band of 560-600 nm; the said pumping source is a diode laser matrix with a wavelength of 880 nm-980 nm; the input cavity mirror and the output cavity mirror are coated with films to obtain laser output at the band of 560-600 nm; the two large faces of the said self-frequency-doubling crystal is cooled by heat sink and located between the input cavity mirror and the output cavity mirror. The laser of the present invention can realize stable high-power laser output, and has a low laser threshold, high conversion efficiency and simple design.
机译:本发明提供了一种基于声子带边缘发射的全固态高功率平板激光器,其包括泵浦源,聚焦系统,谐振腔和自频倍增晶体;上述自频 - 倍增晶体是沿着晶体的最大有效非线性系数的方向切成平板形状的YB掺杂的recob晶体;通过改变晶体的切割方向,实现了不同波长的相位匹配,从而在560-600nm的条带处实现激光输出;所述泵浦源是二极管激光矩阵,波长为880nm-980nm;输入腔镜和输出腔镜涂有薄膜,以在560-600nm的带上获得激光输出;所述自频倍增晶体的两个大面通过散热器冷却并位于输入腔镜和输出腔镜之间。本发明的激光可以实现稳定的高功率激光输出,并且具有低激光阈值,高转换效率和简单的设计。

著录项

  • 公开/公告号EP3641081A4

    专利类型

  • 公开/公告日2021-05-05

    原文格式PDF

  • 申请/专利权人 SHAN DONG UNIVERSITY;

    申请/专利号EP20190797152

  • 申请日2019-03-14

  • 分类号H01S3/109;H01S3/04;H01S3/06;H01S3/08;H01S3/094;H01S3/0941;H01S3/16;

  • 国家 EP

  • 入库时间 2022-08-24 18:33:36

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