首页> 外国专利> PHONON BAND EDGE EMISSION-BASED ALL SOLID STATE HIGH POWER SLAB LASER

PHONON BAND EDGE EMISSION-BASED ALL SOLID STATE HIGH POWER SLAB LASER

机译:基于PHONON带边缘发射的全固态大功率平板激光器

摘要

Provided is a phonon band edge emission-based all solid state high power slab laser, comprising a pump source, a focussing system, a laser resonant cavity and a self-frequency doubling crystal. The self-frequency doubling crystal is an ytterbium ion doped calcium oxoborate rare earth salt crystal cut into a slab shape along a crystal non-principal plane maximum effective non-linear coefficient direction. A tangential direction of the crystal is altered to implement different wavelength phase matching, and a 560-600nm wave band laser output. The pump source is a laser diode array having a wavelength of 880nm-980nm. An input cavity mirror and an output cavity mirror are coated to obtain the 560-600nm wave band laser output. Two large planes of the self-frequency doubling crystal are cooled by a heat sink, and are located between the input cavity mirror and the output cavity mirror. The laser implements a high power stable laser output, and has a low laser threshold value, a high conversion efficiency, and a simple laser design.
机译:提供了一种基于声子带边缘发射的全固态高功率平板激光器,包括泵浦源,聚焦系统,激光谐振腔和自倍频晶体。自倍频晶体是along掺杂离子的氧杂硼酸钙稀土盐晶体,其沿着晶体非主面最大有效非线性系数方向切成平板状。改变晶体的切线方向以实现不同的波长相位匹配和560-600nm波段的激光输出。泵浦源是具有880nm-980nm波长的激光二极管阵列。涂覆输入腔镜和输出腔镜以获得560-600nm波段的激光输出。自激倍频晶体的两个大平面由散热器冷却,并位于输入腔镜和输出腔镜之间。该激光器实现了高功率稳定的激光器输出,并且具有低的激光器阈值,高的转换效率和简单的激光器设计。

著录项

  • 公开/公告号WO2020001050A1

    专利类型

  • 公开/公告日2020-01-02

    原文格式PDF

  • 申请/专利权人 SHAN DONG UNIVERSITY;

    申请/专利号WO2019CN76480

  • 申请日2019-03-14

  • 分类号H01S3/16;H01S3/0941;H01S3/094;H01S3/109;H01S3/08;

  • 国家 WO

  • 入库时间 2022-08-21 11:14:07

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