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Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping
Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping
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机译:使用选择性硅氮化物封盖的自对准内部间隔物和SOI FinFET的多通道纳米线器件的制造
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摘要
Methods of selectively nitriding surfaces of semiconductor devices are disclosed. For example, a hardmask is formed on the top portion of the fins to create SOI structure. The hardmask may be formed by nitriding the top portion of the fin. In other embodiments, silicon nitride is grown on the top portion of the fin to form the hard masks. In another example, internal spacers are formed between adjacent nanowires in a gate-all-around structure. The internal spacers may be formed by nitriding the remaining interlayer material between the channel region and source and drain regions.
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