MLU-based magnetic sensor with improved programmability and sensitivity

摘要

The present disclosure is a magnetic sensor device (100) that senses an external magnetic field and includes a plurality of MLU cells (1), each MLU cell (1) includes a magnetic tunnel junction (2), and a magnetic tunnel junction ( 2) a sense layer (21) having a sense magnetization (210) that can be freely oriented in an external magnetic field, a storage layer (23) having a storage magnetization (230), a sense layer (21), and a storage layer ( 23) between which the magnetic sensor device (100) has a stress-induced magnetic anisotropy (271) on at least one of the sense layer (21) and the storage layer. 272) further comprising a stress inducing device (6) configured to apply an anisotropic mechanical stress on the magnetic tunnel junction (2) to induce stress induced magnetism induced by the stress inducing device. Anisotropy (271, 27 ) Is, the sense layer (21) and the magnetic sensor device substantially corresponds to the anisotropy (280) said at least one layer net of the storage layer (23) about the (100). This magnetic sensor device can be easily programmed and has improved sensitivity. (Fig. 4)