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COMPOSITION FOR DEPOSITING THIN FILM, MANUFACTURING METHOD FOR THIN FILM USING THE COMPOSITION, THIN FILM MANUFACTURED FROM THE COMPOSITION, AND SEMICONDUCTOR DEVICE INCLUDING THE THIN FILM
COMPOSITION FOR DEPOSITING THIN FILM, MANUFACTURING METHOD FOR THIN FILM USING THE COMPOSITION, THIN FILM MANUFACTURED FROM THE COMPOSITION, AND SEMICONDUCTOR DEVICE INCLUDING THE THIN FILM
Organometallic compounds including strontium, barium, or a combination thereof; And a thin film deposition composition comprising at least one non-shared electron pair-containing compound represented by the following Formula 1, a method of manufacturing a thin film using the thin film deposition composition, and a thin film prepared from the thin film deposition composition, and the thin film It relates to a semiconductor device. [Formula 1] R 1 R 2 R 3 N In Formula 1, the definitions of R 1 to R 3 are as described in the specification.
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机译:有机金属化合物,包括锶,钡或其组合;和薄膜沉积组合物,其包含由下式1表示的至少一种非共用的电子对化合物,使用薄膜沉积组合物制造薄膜,以及由薄膜沉积组合物制备的薄膜和薄膜涉及半导体器件。 [式1] R 1 R 2 R 3 n在式1中, R 1 的定义为r 3 如说明书所述。
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