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ELEVATIONALLY-EXTENDING TRANSISTORS, DEVICES COMPRISING ELEVATIONALLY-EXTENDING TRANSISTORS, AND METHODS OF FORMING A DEVICE COMPRISING ELEVATIONALLY-EXTENDING TRANSISTORS
ELEVATIONALLY-EXTENDING TRANSISTORS, DEVICES COMPRISING ELEVATIONALLY-EXTENDING TRANSISTORS, AND METHODS OF FORMING A DEVICE COMPRISING ELEVATIONALLY-EXTENDING TRANSISTORS
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机译:高度延伸的晶体管,包括延伸晶体管的装置,以及形成包括透过晶体管的装置的方法
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摘要
A device comprises an array comprising rows and columns of elevationally-extending transistors. An access line interconnects multiple of the elevationally-extending transistors along individual of the rows. The transistors individually comprise an upper source/drain region, a lower source/drain region, and a channel region extending elevationally there- between. The channel region comprises an oxide semiconductor. A transistor gate is operatively laterally-proximate the channel region and comprises a portion of an individual of the access lines. Intra-row- insulating material is longitudinally between immediately -intra-row -adjacent of the elevationally-extending transistors. Inter-row-insulating material is laterally between immediately-adjacent of the rows of the elevationally- extending transistors. At least one of the intra-row-insulating material and the inter-row-insulating material comprises void space. Other embodiments, including method embodiments, are disclosed.
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