Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution

摘要

A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm⁻¹, with an absorbance per unit thickness of greater than about 0.01 cm⁻¹. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×10¹⁸ per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.