首页> 外国专利> Wetting wave front control for reduced air entrapment during wafer entry into electroplating bath

Wetting wave front control for reduced air entrapment during wafer entry into electroplating bath

机译:晶圈进入电镀浴过程中的空气滞留下的润湿波前控制

摘要

Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.
机译:本文描述的方法将晶片进入电解质中,使得由于晶片和/或晶片支架具有电解质的初始撞击而导致的空气滞留,并且晶片以这样的方式移动,使得在浸没过程中保持电解质润湿波前线晶片还最小化空气滞留。

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