首页> 外国专利> Wetting wave front control for reduced air entrapment during wafer entry into electroplating bath

Wetting wave front control for reduced air entrapment during wafer entry into electroplating bath

机译:润湿波前控制可减少晶圆进入电镀槽时的空气夹带

摘要

Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.
机译:本文所述的方法管理晶片进入电解质中,从而减少了由于晶片和/或晶片保持器受到电解质的初始冲击而导致的空气截留,并且以如下方式移动晶片,使得在整个浸入过程中保持电解质的润湿波前。晶圆还可以最大程度地减少空气夹带。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号