首页> 外国专利> A PHOTOVOLTAIC DEVICE HAVING A LIGHT ABSORBING LAYER INCLUDING A PLURALITY OF GRAINS OF A DOPED SEMICONDUCTING MATERIAL

A PHOTOVOLTAIC DEVICE HAVING A LIGHT ABSORBING LAYER INCLUDING A PLURALITY OF GRAINS OF A DOPED SEMICONDUCTING MATERIAL

机译:具有具有掺杂半导体材料的多个晶粒的光吸收层的光伏器件

摘要

The present invention relates to a photovoltaic device (10) comprising: a first conducting layer (16), a second conducting layer electrically insulated from the first conducting layer, a porous substrate (20) made of an insulating material arranged between the first and second conducting layers, a light absorbing layer (1) comprising a plurality of grains (2) of a doped semiconducting material disposed on the first conducting layer (16) so that the grains are in electrical and physical contact with the first conducting layer, and_a charge conductor (3) made of a charge conducting material partly covering the grains and arranged to penetrate through the first conducting layer (16) and the porous substrate such that a plurality of continuous paths (22) of charge conducting material is formed from the surface of the grains (2) to the second conducting layer (18), wherein the first conducting layer (16) comprises a conducting material, an oxide layer (28) formed on the surface of conducting material, and an insulating coating (29) made of an insulating material deposited on the oxide layer (28) so that the oxide layer and the insulating coating together electrically insulate said paths (22) from the conducting material of the first conducting layer (16).
机译:光伏器件(10)技术领域本发明涉及一种光伏器件(10),包括:第一导电层(16),与第一导电层电绝缘的第二导电层,多孔基板(20)由布置在第一和第二之间的绝缘材料制成导电层,一种光吸收层(1),包括设置在第一导电层(16)上的掺杂半导体材料的多个晶粒(2),使得所述晶粒与所述第一导电层的电气接触,并且电荷导体(3)由部分覆盖晶粒的电荷导电材料制成,并且布置成穿过第一导电层(16)和多孔基板,使得从表面形成电荷导电材料的多个连续路径(22)晶粒(2)到第二导电层(18),其中所述第一导电层(16)包括导电材料,形成在所述系列表面上的氧化物层(28) G材料和由沉积在氧化物层(28)上的绝缘材料制成的绝缘涂层(29),使得氧化物层和绝缘涂层一起与第一导电层的导电材料电绝缘地电绝缘(22) 16)。

著录项

  • 公开/公告号EP3652763B1

    专利类型

  • 公开/公告日2021-03-31

    原文格式PDF

  • 申请/专利权人

    申请/专利号EP20180734824

  • 发明设计人 LINDSTRÖM HENRIK;

    申请日2018-06-29

  • 分类号H01G9/20;H01L51/42;

  • 国家 EP

  • 入库时间 2024-06-14 21:24:12

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