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METHOD FOR PREPARING LAYERED COBALT ARSENIDE, LAYERED COBALT ARSENIDE PREPARED THEREBY, AND COBALT ARSENIDE NANOSHEET EXFOLIATED THEREFROM
METHOD FOR PREPARING LAYERED COBALT ARSENIDE, LAYERED COBALT ARSENIDE PREPARED THEREBY, AND COBALT ARSENIDE NANOSHEET EXFOLIATED THEREFROM
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机译:制备层状钴砷化物的方法,由此制备层状钴砷化物,并从中剥离钴砷酰胺纳米晶片
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摘要
The present invention relates to: a method for preparing layered cobalt arsenide (CoAs); layered cobalt arsenide prepared thereby; a cobalt arsenide nanosheet exfoliated therefrom; and a thermoelement, an optoelectronic device and a semiconductor device which comprise the layered cobalt arsenide or the cobalt arsenide nanosheet, and, more specifically, to: a method for preparing CoAs compound having a 2D layered crystal structure, unlike known CoAs compound having a 3D crystal structure; layered CoAs prepared thereby; and a CoAs nanosheet exfoliated therefrom.
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