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Memory cell sensing based on precharging an access line using a sense amplifier
Memory cell sensing based on precharging an access line using a sense amplifier
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机译:基于预充电使用读出放大器的存储器单元感测
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摘要
Methods, systems, and devices for operating a memory device are described. A sense amplifier may be used to precharge an access line to increase the reliability of the sensing operation. The access line may then charge share with the memory cell and a capacitor, which may be a reference capacitor, which may result in high-level states and low-level states on the access line. By precharging the access line with the sense amplifier and implementing charge sharing between the access line and a capacitor, the resulting high-level state and the low-level states on the access line may account for any offset voltage associated with the sense amplifier.
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